Recent Publications

Effect of H on the conductivity of transparent conducting oxides

- P. Weiser, Y. Qin, W. Yin, M. Stavola, W.B. Fowler, and L.A. Boatner, Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3, Appl. Phys. Lett. 109, 202105 (2016).

- W. Yin, Y. Qin, W.B. Fowler, M. Stavola, and L.A. Boatner, Interstitial hydrogen in VO2: vibrational spectroscopy and density functional theory, J. Phys. Cond. Matter 28, 395401 (2016).

- W. Yin, K. Smithe, P. Weiser, M. Stavola, W.B. Fowler, L. Boatner, S.J. Pearton, D.C. Hays, and S.G. Koch, Hydrogen centers and the conductivity of In2O3 single crystals,  Phys. Rev. B 91, 075208 (2015).

- M. Stavola, F. Bekisli, W. Yin, K. Smithe, W.B. Fowler, and L.A. Boatner, Contrasting the experimental properties of hydrogen in SnO2. In2O3, and TiO2, J. Appl. Phys. 115, 012001 (2014).

- F. Bekisli, W. B. Fowler, and M. Stavola, Small polaron characteristics of an OD center in TiO2 studied by infrared spectroscopyPhys. Rev. B 86, 155208 (2012).

- F. Bekisli, W.B. Fowler, M. Stavola, L. Boatner, E. Spahr, and G. Lupke, Bond angles for O-H defects in SnO2 from polarization properties of their vibrational modes, Phys. Rev. B 85, 205202 (2012)

- F. Bekisli, M. Stavola, W.B. Fowler, L. Boatner, E. Spahr, and G. Lupke, Hydrogen impurities and shallow donors in SnO2 studied by infrared spectroscopy, Phys. Rev. B 84, 035213 (2011).

- G. A. Shi, M. Stavola, and W. B. Fowler, Identification of an OH-Li center in ZnO, Phys. Rev. B 73, 081201(R) (2006).

- G.A. Shi, M. Saboktakin, J. Stavola, and S.J. Pearton, “Hidden Hydrogen” in as-grown ZnO, Appl. Phys. Lett. 85, 5601 (2004).

Impurities in Si solar cells materials

- M. Stavola, S.K. Estreicher, and M. Stavola, Light-element impurities and their reactions in multicrystalline Si, Solid State Phenomena 205-206, 201 (2014).

- H. Zhang, M. Stavola, and M. Seacrist, Nitrogen-containing point defects in multicrystalline Si solar-cell materials, J. Appl. Phys. 114, 093707 (2013).

- C. Peng, H. Zhang, M. Stavola, W.B. Fowler, B. Esham, S.K. Estreicher, A. Docaj, L. Carnel, and M. Seacrist, Microscopic structure of a VH4 center trapped by C in Si, Phys. Rev. B 84, 195205 (2011).

- C. Peng, H. Zhang, M. Stavola, V. Yelundur, A. Rohatgi, L. Carnel, M. Seacrist, and J. Kalejs, Interaction of hydrogen with carbon in multicrystalline Si solar-cell materials, J. Appl. Phys. 109, 053517 (2011).

- S. Kleekajai, F. Jiang, M. Stavola, V. Yelundur, K. Nakayashiki, A. Rohatgi, G. Hahn, S. Seren, and J. Kalejs, Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells, J. Appl. Phys. 100, 093517 (2006).

- F. Jiang, M. Stavola, A. Rohatgi, D. Kim, J. Holt, H. Atwater, J. Kalejs, Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si. Appl. Phys. Lett. 83, 931 (2003).

Band gap shift of dilute III-N-V alloys caused by H

- L. Wen, F. Bekisli, M. Stavola, W.B. Fowler, R. Trotta, A. Polimeni, M. Capizzi, S. Rubini, and F. Martelli, Detailed structure of the H-N-H center in GaAs1-yNy revealed by vibrational spectroscopy under uniaxial stress, Phys. Rev. B 81, 233201 (2010).

- F. Jiang, M. Stavola, M. Capizzi, A. Polimeni, A. Amore Bonapasta, and F. Filippone, Vibrational spectroscopy of hydrogenated GaAs1-yNy: A structure-sensitive test of an H2* model, Phys. Rev. B 69, 041309(R) (2004).

H2 in Si

- C. Peng, M. Stavola, W. B. Fowler, and M. Lockwood, Ortho-para transition of interstitial H2 and D2 in Si, Phys. Rev. B 80, 125207 (2009).

- G.A. Shi, M. Stavola, W.B. Fowler, E E. Chen, Rotational-vibrational transitions of interstitial HD in Si, Phys. Rev. B 72, 085207 (2005).

- M. Stavola, E E. Chen, W.B. Fowler, G.A. Shi, Interstitial H2 in Si: Are all problems solved, Physica B 340-342, 58 (2003).

- E E. Chen, M. Stavola, W.B. Fowler, and P. Walters, Key to understanding interstitial H2 in Si, Phys. Rev. Lett. 88, 105507 (2002).

Books

- Identification of Defects in Semiconductors, edited by M. Stavola, Volumes 51A (1998) and 51B (1999) in the series Semiconductors and Semimetals (Academic, Boston).

- S. J. Pearton, J.W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors, (Springer-Verlag, Heidelburg, 1992).

Book Chapters

- Microscopic structure of NHn complexes in dilute nitride semiconductors revealed by their vibrational properties, M. Stavola and W.B. Fowler, in Hydrogenated Dilute Nitride Semiconductors: Theory, Properties, and Applications, ed. G. Ciatto (Pan Stanford, Singapore, 2015), Chapt. 5, p. 129.

-. Hydrogen in Si and Ge, S.K. Estreicher, M. Stavola, and J. Weber, in Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals, edited by G. Kissinger and S. Pizzini (CRC Press 2014), Chap. 7.

-. Vibrational Spectroscopy of Light Element Impurities in Semiconductors, M. Stavola, Chapt. 3 in Identification of Defects in Semiconductors, edited by M. Stavola, Vol. 51B in the series Semiconductors and Semimetals (Academic, Boston, 1998)